Field Effect Transistor - ορισμός. Τι είναι το Field Effect Transistor
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Τι (ποιος) είναι Field Effect Transistor - ορισμός

METAL SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
Metal–semiconductor field effect transistor; Metal-semiconductor field effect transistor; Metal–semiconductor field-effect transistor; Metal-semiconductor field-effect transistor

field effect transistor         
  • FET conventional symbol types
  • Insulator}}
Top: source, bottom: drain, left: gate, right: bulk. Voltages that lead to channel formation are not shown.
  • I–V characteristics and output plot of a JFET n-channel transistor.
  • [[Julius Edgar Lilienfeld]] proposed the concept of a field-effect transistor in 1925.
  • Cross section of an n-type MOSFET
  • Simulation result for right side: formation of inversion channel (electron density) and left side: current-gate voltage curve (transfer characteristics) in an n-channel [[nanowire]] [[MOSFET]]. Note that the [[threshold voltage]] for this device lies around 0.45 V.
TRANSISTOR THAT USES AN ELECTRIC FIELD TO CONTROL ITS ELECTRICAL BEHAVIOUR
Field-effect transistors; Field-Effect Transistor; Field Effect Transistor; Depletion mode transistor; Depletion-mode transistor; FREDFET; Gate (transistor); Field effect transistor; Field effect transistors; Unipolar transistor; Unipolar transistors; Transistor channel; Channel (transistors); Drain (transistor); Source (transistor); Substrate (transistor); Bulk (transistor); FET (transistor); Body (transistor); Channel (transistor); FET; Depletion Mode Transistor; Fast-reverse epitaxial diode field-effect transistor; Fast-recovery epitaxial diode field-effect transistor; Channel (semiconductor); Gate electrode; P-channel; N-channel; Gate (FET); Drain (FET); Source (FET)
<electronics> (FET) A transistor with a region of donor material with two terminals called the "source" and the "drain", and an adjoining region of acceptor material between, called the "gate". The voltage between the gate and the substrate controls the current flow between source and drain by depleting the donor region of its charge carriers to greater or lesser extent. There are two kinds of FET's, Junction FETs and MOSFETs. Because no current (except a minute leakage current) flows through the gate, FETs can be used to make circuits with very low power consumption. Contrast bipolar transistor. (1995-10-05)
Field-effect transistor         
  • FET conventional symbol types
  • Insulator}}
Top: source, bottom: drain, left: gate, right: bulk. Voltages that lead to channel formation are not shown.
  • I–V characteristics and output plot of a JFET n-channel transistor.
  • [[Julius Edgar Lilienfeld]] proposed the concept of a field-effect transistor in 1925.
  • Cross section of an n-type MOSFET
  • Simulation result for right side: formation of inversion channel (electron density) and left side: current-gate voltage curve (transfer characteristics) in an n-channel [[nanowire]] [[MOSFET]]. Note that the [[threshold voltage]] for this device lies around 0.45&nbsp;V.
TRANSISTOR THAT USES AN ELECTRIC FIELD TO CONTROL ITS ELECTRICAL BEHAVIOUR
Field-effect transistors; Field-Effect Transistor; Field Effect Transistor; Depletion mode transistor; Depletion-mode transistor; FREDFET; Gate (transistor); Field effect transistor; Field effect transistors; Unipolar transistor; Unipolar transistors; Transistor channel; Channel (transistors); Drain (transistor); Source (transistor); Substrate (transistor); Bulk (transistor); FET (transistor); Body (transistor); Channel (transistor); FET; Depletion Mode Transistor; Fast-reverse epitaxial diode field-effect transistor; Fast-recovery epitaxial diode field-effect transistor; Channel (semiconductor); Gate electrode; P-channel; N-channel; Gate (FET); Drain (FET); Source (FET)
The field-effect transistor (FET) is a type of transistor that uses an electric field to control the flow of current in a semiconductor. FETs (JFETs or MOSFETs) are devices with three terminals: source, gate, and drain.
field-effect transistor         
  • FET conventional symbol types
  • Insulator}}
Top: source, bottom: drain, left: gate, right: bulk. Voltages that lead to channel formation are not shown.
  • I–V characteristics and output plot of a JFET n-channel transistor.
  • [[Julius Edgar Lilienfeld]] proposed the concept of a field-effect transistor in 1925.
  • Cross section of an n-type MOSFET
  • Simulation result for right side: formation of inversion channel (electron density) and left side: current-gate voltage curve (transfer characteristics) in an n-channel [[nanowire]] [[MOSFET]]. Note that the [[threshold voltage]] for this device lies around 0.45&nbsp;V.
TRANSISTOR THAT USES AN ELECTRIC FIELD TO CONTROL ITS ELECTRICAL BEHAVIOUR
Field-effect transistors; Field-Effect Transistor; Field Effect Transistor; Depletion mode transistor; Depletion-mode transistor; FREDFET; Gate (transistor); Field effect transistor; Field effect transistors; Unipolar transistor; Unipolar transistors; Transistor channel; Channel (transistors); Drain (transistor); Source (transistor); Substrate (transistor); Bulk (transistor); FET (transistor); Body (transistor); Channel (transistor); FET; Depletion Mode Transistor; Fast-reverse epitaxial diode field-effect transistor; Fast-recovery epitaxial diode field-effect transistor; Channel (semiconductor); Gate electrode; P-channel; N-channel; Gate (FET); Drain (FET); Source (FET)
¦ noun Electronics a transistor in which most current is carried along a channel whose effective resistance can be controlled by a transverse electric field.

Βικιπαίδεια

MESFET

A MESFET (metal–semiconductor field-effect transistor) is a field-effect transistor semiconductor device similar to a JFET with a Schottky (metal–semiconductor) junction instead of a p–n junction for a gate.